Differentiate between Ohmic contact and Schottky
. junction for metal-semi conductor junction
Ohmic contact refers to a type of electrical contact between a metal and a semiconductor, where the current-voltage (I-V) characteristics exhibit linear behavior. In this type of contact, the electrical conductivity of the metal and the semiconductor are similar, allowing for a good flow of current across the junction. Ohmic contacts are typically formed by depositing a metal layer directly on the semiconductor material or by alloying metal into the semiconductor.
On the other hand, a Schottky junction, also known as a Schottky barrier, is a type of electrical junction between a metal and a semiconductor, where the current-voltage characteristics exhibit nonlinear behavior. In a Schottky junction, there is an energy barrier at the metal-semiconductor interface, which inhibits the flow of current. The Schottky barrier is formed due to the difference in work function between the metal and the semiconductor. The metal layer forms a rectifying contact with the semiconductor, allowing current to flow in one direction but not in the opposite direction.
In summary, the main difference between an Ohmic contact and a Schottky junction for a metal-semiconductor junction lies in the type of I-V characteristics they exhibit. Ohmic contacts show linear I-V characteristics, while Schottky junctions exhibit nonlinear I-V characteristics due to the presence of a Schottky barrier.