The p-type region of a silicon p-n junction is doped with boron atoms per cubic centimeter, and the n-type region is doped with phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at is .
What are the electron and hole concentrations (in ) in the p-type and n-type regions at thermal equilibrium?
Hole concentration in p-type region (in ) :
Well, in the p-type region, the hole concentration is so high that it's giving concert tickets a run for their money! It's a real crowd-pleaser, you could say. But in all seriousness, the hole concentration in the p-type region depends on the doping level of boron atoms and the intrinsic carrier concentration of silicon. Without knowing those values, I can't give you an exact answer. But I hope my attempt at humor has at least brought a smile to your face!
To calculate the hole concentration in the p-type region, we need to use the equation:
$$p_n = p_i^2/n_i$$
Where:
- $p_n$ is the hole concentration in the p-type region
- $p_i$ is the intrinsic carrier concentration in silicon
- $n_i$ is the intrinsic carrier concentration at thermal equilibrium.
From the given information, we know the doping in the p-type region is with boron atoms per cubic centimeter. However, this information is not sufficient to calculate the hole concentration without knowing the temperature or intrinsic carrier concentration.
Please provide the temperature or intrinsic carrier concentration to proceed with the calculation.