Chemistry

N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conductivity measurments is determined to be 3.091*10^17 carriers/cm3 at room temperature.

1. Calculate the doping level of P (how much P has been added to the Si). Express your answer in units of g P / kg Si.

2. What is the majority charge carrier in the material described above?

A. p-type
B. n-type
C. electrons
D. holes

  1. 👍 0
  2. 👎 0
  3. 👁 110
asked by Alan
  1. For 2, ans is electrons of course.

    1. 👍 0
    2. 👎 0
    posted by anonyms
  2. For 1= 3.091*10^17/Na*30.91= 1.59*10^41 convert in gP so may be 1.53*10^-5 gP. cant calculate further i am confused. till this it is just perfect

    1. 👍 0
    2. 👎 0
    posted by anonyms
  3. Ya got it, answer is i think 6.82*10^-3

    1. 👍 0
    2. 👎 0
    posted by anonyms
  4. 6.82*10^-3 is right

    1. 👍 0
    2. 👎 0
    posted by A
  5. currect answer is 6.82e-3

    1. 👍 0
    2. 👎 0
    posted by himani.

Respond to this Question

First Name

Your Response

Similar Questions

  1. chemistry

    N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conductivity measurments is determined to be 3.091*1017 carriers/cm3 at room temperature. Calculate the doping

    asked by Anonymous on April 26, 2013
  2. chemistry

    N Type silicon has been produced by doping with (P).the charge carrier population based on electrical conductivity measurement is determined to be 3.091*10^17 carriers/cm3 at room temperature. calculate doping level of P (how much

    asked by himani. on April 28, 2013
  3. physics

    WHICH ONE OF THE FOLLOWING STATEMENTS BEST EXPLAINS WHY SEMICONDUCTORS IN TRANSISTORS ARE DOPED? A) doping converts the semiconducting material into a metallic material like copper. b) doping makes the charge carriers mobile. c)

    asked by seema on May 1, 2010
  4. Chemistry

    In the context of a silicon-based semiconductor, match each of the following descriptions to the type of semiconductor. dopant:boron contains electron holes contains extra electrons dopant:phosphorus n-type semiconductors or

    asked by gnozahs on May 14, 2009
  5. solar homework

    We have discussed that a bare crystalline silicon surface contains many defects which act as SRH recombination centers. How can the surface recombination at the air/n-silicon interface be reduced? Note that you can mark more than

    asked by Anonymous on December 25, 2016
  6. tudelft

    Consider p-type silicon in thermal equilibrium with an intrinsic carrier concentration ni=1.5xE10 cm-3 and a hole concentration of Po=3.0xE16 cm-3 . The lifetime of the minority carrier electrons is Tno=3.0xE-17. Calculate the

    asked by mame on July 18, 2017
  7. chemistry

    Determine the amount (in grams) of boron that when substitutionally incorporated into of silicon will establish a charge carrier density of carriers/cm .

    asked by adex on April 1, 2013
  8. chemistry

    A p-n junction is to be created by diffusing boron into an n-type silicon wafer with an existing carrier conc.

    asked by himani. on June 2, 2013
  9. chemistry

    Gallium Arsenide ---------------- The charge carrier density of GaAs at 31o C is 2.25x106 cm-3. What is the charge carrier density (in cm-3) at 175oC? (The bandgap of GaAs is 1.42 eV. ) I am trying with arrhenius relationship but

    asked by WIlliam on August 25, 2014
  10. Chemistry

    Determine the amount (in grams) of boron that when substitutionally incorporated into 1 kg of silicon will establish a charge carrier density of 3.091×1017 carriers/cm3.

    asked by selly on November 19, 2012

More Similar Questions