Chemistry

posted by .

Determine the amount (in grams) of boron that when substitutionally incorporated into 1 kg of silicon will establish a charge carrier density of 3.091×1017 carriers/cm3.

  • Chemistry -

    Answer : 2.4227*10^-3
    i.e. 0.002423

  • Chemistry -

    thanks

  • Chemistry -

    Information
    density Si=2.33 g/cc
    Mw(P)=10.81 g/mole
    NA=6.022*10^23 at/mole


    V (Si)=1 Kg *1000 g/Kg /(2.33 g/cc = 4.29*10^2 cc

    moles B/cc = 3.091*10^17 carriers/cc /6.022*10^23 =5.133*10^-7 moles B/cc

    moles B= 5.133*10^-7 moles/cc *4.29*10^2 cc= 2.203*10^-4 moles B

    g B= 2.203*10^-4 moles * 10.81 g/mole = 2.4227*10^-3 g

Respond to this Question

First Name
School Subject
Your Answer

Similar Questions

  1. chemistry

    Chemical analysis of a silicon crystal reveals gallium at a level of 3.091×10−4 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Si matrix is negligible, what is the density of free …
  2. Chemistry

    Chemical analysis of a silicon crystal reveals gallium at a level of 3.091×10−4 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Si matrix is negligible, what is the density of free …
  3. chemistry

    Chemical analysis of a silicon crystal reveals gallium at a level of 3.091×10−2 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Si matrix is negligible, what is the density of free …
  4. chemistry

    Chemical analysis of a silicon crystal reveals gallium at a level of 3.091*10^-7 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Si matrix is negligible, what is the density of free charge …
  5. Chemistry

    Chemical analysis of a silicon crystal reveals gallium at a level of 3.091×10−4 atomic percent. Assuming that the concentration of thermally excited charge carriers from the Si matrix is negligible, what is the density of free …
  6. chemistry

    Determine the amount (in grams) of boron that when substitutionally incorporated into of silicon will establish a charge carrier density of carriers/cm .
  7. chemistry

    N-type silicon (Si) has been produced by doping with phosphorus (P). The charge-carrier population based on electrical conductivity measurments is determined to be 3.091*1017 carriers/cm3 at room temperature. Calculate the doping level …
  8. chemistry

    a chemical analysis that silicon crystal weighing 100 gm containing 16.5 mg of aluminium which is substitutionally incorporated (the aluminium atoms replaced some of the silicon atom) what is the number of extrinsic charge carriers …
  9. chemistry

    N Type silicon has been produced by doping with (P).the charge carrier population based on electrical conductivity measurement is determined to be 3.091*10^17 carriers/cm3 at room temperature. calculate doping level of P (how much …
  10. chemistry

    Determine the amount (in grams) of boron required to be substitutionally incorporated into 1.000 kg of germanium in order to achieve a charge carrier density of 3.091 x 1017/cm3. Assume intrinsic carriers are negligible. What type …

More Similar Questions