(a) Silicon (50 g) has been doped with 27 mg of antimony (Sb). Determine the concentration of free charge carriers (carriers/cm3) at room temperature in this material.
(b) Calculate the absorption edge of this material. Express your answer as a wavenumber in units of inverse meters.
For a) 6.22*10^18
Any ideas for b)
I'll be appreciate if you tell me about b
9.1E21
NOT RIGHT
wavenumber= Eg / hc
Eg(Silicon band energy)= 1.11 eV (to joules)
h=6.6*10^-34
c=3*10^8
wavenumber= Eg*1.6*10^-19 / hc = 896969.69