Critical dimension of a lithography system is given by:
Line width
Spacing
Contact dimension
Minimum of these three
To determine the critical dimension of a lithography system, we need to consider various factors such as line width, spacing, and contact dimensions. The critical dimension refers to the smallest, most vital dimension of these three parameters.
To calculate the critical dimension, follow these steps:
1. Line Width: Consider the minimum allowable width of a line that can be accurately resolved by the lithography system. This value represents the line width.
2. Spacing: Determine the minimum acceptable spacing between two features or lines. This value represents the spacing dimension.
3. Contact Dimension: Evaluate the smallest allowable dimension for contact between different layers or materials in the lithography system. This value represents the contact dimension.
4. Minimum Value: Compare the values obtained in steps 1, 2, and 3. The critical dimension is the smallest value among these dimensions.
For example, if the line width is 10 nm, the spacing is 15 nm, and the contact dimension is 8 nm, the critical dimension would be 8 nm since it is the smallest value among these three parameters.
It's crucial to minimize the critical dimension in lithography systems to achieve high-resolution imaging and precise patterning.