An oxide coated silicon wafer is patterned (circle of 30 µm diameter) using photolithography and is dipped in HF. After 2 minutes dip, the wafer is examined. The depth of pattern is 1.3 µm and diameter of pattern is 32 µm. Determine the anisotropy of this etching process.

Question

An oxide coated silicon wafer is patterned (circle of 30 µm diameter) using photolithography and is dipped in HF. After 2 minutes dip, the wafer is examined. The depth of pattern is 1.3 µm and diameter of pattern is 32 µm. Determine the anisotropy of this etching process.

0.769
0.231
1.3
0.3

Answer 1

To determine the anisotropy of this etching process, we need to calculate the ratio of the depth of the pattern to the diameter of the pattern:

Anisotropy ratio = (Depth of pattern) / (Diameter of pattern)

Given that the depth of pattern is 1.3 µm and the diameter of pattern is 32 µm, we can substitute these values into the equation:

Anisotropy ratio = 1.3 µm / 32 µm

Now, divide the numerator (1.3 µm) by the denominator (32 µm):

Anisotropy ratio = 0.040625

Therefore, the anisotropy of this etching process is 0.040625 or approximately 0.041.

None of the provided answer choices match the calculated anisotropy ratio.