What is the drift velocity of electrons in Si under room temperature and 500 V/m electric field, as we know that the electron mobility of Si is 0.14 m^2 / V.s at room temperature? Under these conditions, how long can an electron pass a Si crystal of 25 mm from beginning to end?
To determine the drift velocity of electrons in Si, we can use the equation:
v_d = μ * E
where v_d is the drift velocity, μ is the electron mobility, and E is the electric field.
Given that the electron mobility of Si is 0.14 m^2 / V.s and the electric field is 500 V/m, we can substitute these values into the equation to find the drift velocity:
v_d = 0.14 * 500 = 70 m/s
The drift velocity of electrons in Si under these conditions is 70 m/s.
To determine how long it would take for an electron to pass a Si crystal of 25 mm (or 0.025 m) from beginning to end, we can use the equation:
t = d / v_d
where t is the time, d is the distance, and v_d is the drift velocity.
Substituting the given values, we have:
t = 0.025 / 70 ≈ 0.00036 seconds
Therefore, it would take approximately 0.00036 seconds for an electron to pass through a Si crystal of 25 mm under the given conditions.