Indicate which elements can be used as potential semiconductors, and which ones can be used as potential dopants used to make n-type and p-type semiconductors by placing them in the corresponding bin.
F, Al, As, Ge, I.
p-type semiconductors can consist of:
a)highly purified Group III element
b)tiny amounts of a Group III element added to a Group IV element
c) tiny amounts of a Group V element added to a Group IV element
d) tiny amounts of a metal added to a Group III element
e) a highly purified Group IV element
f) equal amounts of a Group III element and a Group IV element
g) a highly purified Group V element
h) equal amounts of a Group IV element and a Group V element
i) tiny amounts of a metal added to a Group V element
To determine which elements can be used as potential semiconductors and potential dopants used to make n-type and p-type semiconductors, we need to understand the properties of these elements and how they interact with each other.
A semiconductor is a material that has electrical conductivity between that of a conductor and an insulator. It can be made by "doping" a semiconductor material with impurities that introduce either excess electrons (n-type doping) or electron deficiencies (p-type doping).
Let's go through each element and determine its potential use as a semiconductor and as a dopant for n-type and p-type semiconductors:
1. F (Fluorine):
- Semiconductor potential: Fluorine is not commonly used as a semiconductor material.
- Dopant potential: Fluorine is not commonly used as a dopant for either n-type or p-type semiconductors.
2. Al (Aluminum):
- Semiconductor potential: Aluminum can function as a semiconductor material but is more commonly used as a metal conductor.
- Dopant potential: Aluminum can be used as a dopant for p-type semiconductors by adding small amounts to a Group IV element.
3. As (Arsenic):
- Semiconductor potential: Arsenic is commonly used as a semiconductor material, specifically for n-type doping.
- Dopant potential: Arsenic can be used as a dopant for n-type semiconductors by adding small amounts to a Group IV element.
4. Ge (Germanium):
- Semiconductor potential: Germanium is commonly used as a semiconductor material.
- Dopant potential: Germanium can be doped for both n-type and p-type semiconductors. For n-type doping, Group V elements like Arsenic (As) can be added, and for p-type doping, Group III elements can be added.
5. I (Iodine):
- Semiconductor potential: Iodine is not commonly used as a semiconductor material.
- Dopant potential: Iodine is not commonly used as a dopant for either n-type or p-type semiconductors.
Based on the above information, the elements can be placed in the corresponding bins as follows:
Potential p-type dopants:
- Group III elements (highly purified or small amounts added): Al (Aluminum)
Potential n-type dopants:
- Group V elements (small amounts added to a Group IV element): As (Arsenic)
Potential semiconductors:
- Group IV elements (highly purified or doped with appropriate dopants): Ge (Germanium)
- Aluminum (Al) can also function as a semiconductor but is more commonly used as a metal conductor.
Potential semiconductors:
- Al (Group III element)
- Ge (Group IV element)
- As (Group V element)
Potential dopants for n-type semiconductors:
- Group V elements (e.g., As)
Potential dopants for p-type semiconductors:
- Group III elements (e.g., Al)