Gallium nitride is a semiconductor with a bandgap 3.2eV . Calculate the absorption edge of GaN . Express your answer in units of m .
To calculate the absorption edge of gallium nitride (GaN), we need to use the energy-bandgap equation and convert it into wavelength using the equation:
λ = hc / E,
where λ is the wavelength, h is the Planck's constant (6.63 x 10^(-34) J.s), c is the speed of light (3 x 10^8 m/s), and E is the energy-bandgap (given as 3.2 eV).
First, we need to convert the energy-bandgap from electron volts (eV) to joules (J) using the conversion factor 1 eV = 1.6 x 10^(-19) J.
E (in J) = 3.2 eV x (1.6 x 10^(-19) J/eV) = 5.12 x 10^(-19) J.
Now, we can calculate the absorption edge wavelength using the equation:
λ = (6.63 x 10^(-34) J.s x 3 x 10^8 m/s) / (5.12 x 10^(-19) J).
Performing the calculation:
λ = 1.30 x 10^(-6) m.
Therefore, the absorption edge of GaN is approximately 1.30 x 10^(-6) meters (m).