You wish to make n-type silicon. Select all suitable dopant atoms from the following list:P, B, Mg, Ga, As, In, Sb, Al, Tl, H

To make n-type silicon, you need to choose dopant atoms that can donate extra electrons to the silicon crystal structure. This allows for the creation of excess negative charge carriers, or electrons, in the material. From the provided list, suitable dopant atoms for making n-type silicon are:

1. Phosphorus (P): Phosphorus is commonly used as a dopant for n-type silicon due to its ability to donate an extra electron.

2. Arsenic (As): Arsenic is another commonly used dopant for n-type silicon. It has the ability to donate an extra electron.

2. Antimony (Sb): Antimony is also a suitable dopant for n-type silicon and can donate an extra electron.

Although boron (B) and aluminum (Al) might seem like suitable options, they are actually used to make p-type silicon because they accept electrons rather than donating them. The other options on the list are not commonly used as dopants for silicon.

Therefore, the suitable dopant atoms for making n-type silicon from the given list are: Phosphorus (P), Arsenic (As), and Antimony (Sb).

To determine the suitable dopant atoms for making n-type silicon, we need to select donor atoms from the given list. Donor atoms are those that can contribute extra electrons to the silicon crystal structure, creating an excess of electrons and resulting in an n-type semiconductor.

The suitable dopant atoms for n-type silicon from the provided list are:
- Phosphorus (P)
- Arsenic (As)
- Antimony (Sb)

These elements have one extra valence electron compared to silicon, allowing them to donate an electron and create an excess of negative charge carriers (electrons) in the silicon crystal lattice.

Other elements in the list, such as Boron (B), Aluminum (Al), and Indium (In) are used for creating p-type silicon, where they act as acceptor atoms, creating a deficiency of electrons and resulting in a positive charge carrier (hole) dominated semiconductor.

Please note that the elements Magnesium (Mg), Gallium (Ga), Thallium (Tl), and Hydrogen (H) are not commonly used as dopant atoms for silicon.