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September 1, 2014

Homework Help: Solar Energy Help ASAP

Posted by Anonymous on Thursday, October 17, 2013 at 3:47pm.

In the figure below the absorption coefficient as a function of the wavelength for several semiconductor materials is presented. Let's consider monochromatic light of photons with energy of Eph=1.55eV that incidents a film with thickness d. If we ignore possible reflection losses at the rear and front interfaces of the film, what thickness d (in μm) is required to achieve a light absorption of 90%?



UPDATE: Since it was very difficult to accurately read off the absorption coefficient values from the graph above, we have chosen to provide you with these values. The absorption coefficients for the different semiconductor materials at α(800nm) are:

αGaAs=2∗104cm−1
αInP=4∗104cm−1
αGe=6∗104cm−1
αSi=1∗103cm−1.

The thickness d (in μm) required to achieve a light absorption of 90% is:

1) For GaAs


2) For InP


3) For Ge


4) For Si

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